Search results for "DISTRIBUTED BRAGG"

Effects of rapid thermal annealing on the optical properties of low-loss 1.3μm GaInNAs∕GaAs saturable Bragg reflectors

2004

We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 mum saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolithically on a GaAs substrate. RTA gives rise to a blueshift of the photoluminescence (PL) peak (and therefore of the excitonic absorption peak) and an enhancement of PL intensity, while the reflectivity properties including peak reflectivity and bandwidth are not degraded. Temperature dependent photoluminescence measurements show that the RTA-induced blueshift of photoluminescence consists of two components: one originating from the increase of op…

Microreflectivity studies of wavelength control in oxidised AlGaAs microcavities

2003

Wet oxidation of GaAs/AlGaAs structures is an important technique in the processing of advanced devices such as vertical cavity surface emitting lasers (VCSELs). In one VCSEL application, the low-index and electrically-insulating AlxOy layers have been used to obtain high-reflectivity and broad bandwidth distributed Bragg reflector mirrors (DBRs). A further recent development has shown that combined lateral–vertical oxidation of intracavity AlGaAs layers can be used to tune the resonant wavelength of a semiconductor microcavity. The slow oxidation rate limits the lateral scale of practical wet oxidation to mesas structures of 50–100 μm in width. Therefore post-processing assessment of spect…

Electrical and optical low frequency noises in multimodal vertical cavity surface emitting lasers

2006

Experimental investigations of the low frequency noise of multimode 780 nm vertical cavity surface emitting lasers are reported. Electrical noise, optical noise and their correlation have been measured in the frequency range 1 Hz–95 kHz. The results show that the main contribution to the electrical noise is located in the distributed Bragg reflector layers of the laser. The optical power and pump current noise sources are strongly correlated below and around the threshold, while are weakly correlated above threshold. It is argued that the noise in the optical power is due to both free injection carrier noise and optical gain fluctuations.

Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon

2003

Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor p…

Near-field characterization of Bragg mirrors engraved in surface plasmon waveguides

2004

International audience; Surface plasmon waveguides (SPW's) are metal ridges featuring widths in the micrometer range and thicknesses of a few tens of nanometers. A focused ion beam has been used to carve microscatterers into gold SPW's and the near-field distributions around these microstructures are observed by means of photon scanning tunneling microscopy (PSTM). On the basis of near-field images, we show that a finite length periodic arrangement of narrow slits can reflect a surface plasmon mode propagating along a SPW. The reflection efficiency of the micrograting is found to depend upon the number of slits, the period of the grating, and the incident wavelength. The optimum reflection …

DEVELOPMENT AND NEAR-FIELD CHARACTERIZATION OF SURFACE PLASMON WAVEGUIDES

2007

GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications

2004

We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

2007

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified …

Imaging Surface Plasmons

2012

Controlling surface plasmons is at the heart of plasmonics. Advances in this field are to a large extent triggered by our ability to visualize surface plasmons in their different forms. In this chapter, we provide a review of the different techniques capable of imaging and visualizing surface plasmons. We have divided these techniques in three distinct families: proximal probe techniques, far-field microscopies, and electron imaging. We review here their principal characteristics, advantages, and limitations and illustrate the discussion with images taken from the literature.

Room-temperature polariton luminescence from a bulk GaN microcavity

2006

We report strong exciton-photon coupling at room temperature in a hybrid high quality bulk 3 lambda/2 GaN cavity with a bottom lattice-matched AlInN/AlGaN distributed Bragg reflector through angle-resolved polarized photoluminescence (PL). Coupling of the optically active free excitons (X-A, X-B, and X-C) to the cavity mode is demonstrated, with their contribution to the PL spectra varying with polarization. Under TE polarization, exciton oscillator strengths for X-A and X-B are about one order of magnitude larger than in bulk GaAs. Photoluminescence exhibits a strong bottleneck effect despite its thermal lineshape.